? 2008 ixys corporation, all rights reserved ds100063(10/08) v dss = 900v i d25 = 21a r ds(on) 230 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c, r gs = 1m 900 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c21a i dm t c = 25 c, pulse width limited by t jm 80 a i a t c = 25 c20a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.5..27 n/lb. weight 5g preliminary technical information symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 900 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 3.5 ma r ds(on) v gs = 10v, i d = 20a, note 1 230 m IXFR40N90P polar tm power mosfet hiperfet tm fearures z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 2500v electrical isolation z fast intrinsic diode z avalanche rated z low package inductance advantages z low gate drive requirement z high power density applications: z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls g = gate d = drain s = source isolated tab isoplus247 e153432
ixys reserves the right to change limits, test conditions, and dimensions. IXFR40N90P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 20a, note 1 18 30 s r gi gate input resistance 1.5 c iss 14 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 896 pf c rss 58 pf t d(on) 53 ns t r 50 ns t d(off) 77 ns t f 46 ns q g(on) 230 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 20a 70 nc q gd 100 nc r thjc 0.42 c /w r thcs 0.15 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 40 a i sm repetitive, pulse width limited by t jm 160 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.7 c i rm 14.0 a preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 20a, -di/dt = 100a/ s v r = 100v, v gs = 0v isoplus247 (ixfr) outline resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 20a r g = 1 (external)
? 2008 ixys corporation, all rights reserved IXFR40N90P fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0123456789 v ds - volts i d - amperes v gs = 10v 9v 7 v 8 v 6 v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7 v 6 v 8 v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 02468101214161820 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on) normalized to i d = 20a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 40a i d = 20a fig. 5. r ds(on) normalized to i d = 20a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 102030405060708090 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFR40N90P ixys ref: f_40n90p(96)10-23-08 fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 q g - nanocoulombs v gs - volts v ds = 450v i d = 20a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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